PTFC262157FH Datasheet, PDF (8/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz

Reference Circuit (cont.)
Component Information (cont.)
Component
Description
Input (cont.)
R101, R802
Resistor, 10 W
R102, R103, R104
Resistor, 10 W
R105
Resistor, 5.1k W
R801
Resistor, 100 W
R803
Resistor, 1.2k W
R804
Resistor, 1.2k W
S1
Transistor
S2
Voltage regulator
S3
Potentiometer, 2k W
Output
C201
Chip capacitor, 0.6
C202, C204
Capacitor, 2.2 µF, 50 V
C203, C206
Chip capacitor, 12 pF
C205, C212
Capacitor, 10 µF
C207, C209
Capacitor, 10 µF
C208
Chip capacitor, 0.5 pF
C210, C211
Chip capacitor, 1 µF
C213, C214
Chip capacitor, 2.2 µF
PTFC262157FH
Suggested Manufacturer P/N
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Infineon Technologies
Fairchild Semiconductor
Bourns Inc.
ERJ-8GEYJ100V
ERJ-3GEYJ100V
ERJ-8GEYJ512V
ERJ-8GEYJ101V
ERJ-3GEYJ122V
ERJ-3GEYJ132V
BCP56-10
LM7805
3224W-1-202E
ATC
Panasonic Electronic Components
ATC
Garrett Electronics
Taiyo Yuden
ATC
TDK Corporation
TDK Corporation
ATC100A0R6CW150XB
EEE-FP1V221AP
ATC100A120JW150XB
281M5002106K
UMK325C7106MM-T
ATC100A0R5CW150XB
C4532X7R2A105M230KA
C4532X7R1H225M160KA
Data Sheet
8 of 10
Rev. 03.1, 2016-06-21