PTFC262157FH Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz

Typical Performance (cont.)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1200 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
60
IMD Low
IMD Up
ACPR
Efficiency
-30
40
-40
20
-50
32
c262157sh-gr6
0
36
40
44
48
52
Output Power (dBm)
PTFC262157FH
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1200 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
2620 MHz
2655 MHz
-25
2690 MHz
-30
-35
-40
30
IMD Up
IMD Low
c262157sh-gr7
34 38 42 46 50 54
Output Power (dBm)
Small Signal CW Performance
V_DD = 28 V, I_DQ = 1200 mA
25
0
20
-10
Gain
15
-20
10
5
2450
-30
IRL
2550
2650
2750
Frequency (MHz)
c262157sh-gr12
-40
2850
CW Performance
V_DD = 28 V, I_DQ = 1200 mA
21
2620 MHz
60
2655 MHz
20
2690 MHz
50
19
40
18
Gain
30
17
20
16
Efficiency
10
15
c262157sh-gr8
0
34 36 38 40 42 44 46 48 50 52 54 56
Output Power (dBm)
Data Sheet
4 of 10
Rev. 03.1, 2016-06-21