PTFC262157FH Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz

PTFC262157FH
Thermally-Enhanced High Power RF LDMOS FET
200 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262157FH LDMOS FET is designed for use in Doherty
cellular power applications in the 2620 MHz to 2690 MHz frequency
band. Input and output matching have been optimized for maximum
performance as the peak side transistor in a Doherty amplifier. Other
features include a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFC262157FH
Package H-34288G-4/2
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1200 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
50
20
40
19
30
18 _Gain
20
17
16
32
Efficiency
36
40
44
48
Output Power (dBm)
10
c262157sh-gr1
0
52
Features
• Broadband internal matching, optimized for Doherty
peak side
• Wide video bandwidth
• Typical single-carrier WCDMA performance, 2690
MHz, 28 V, 10 dB PAR @ 0.01% CCDR
- Output power at P_1dB = 50 W
- Efficiency = 29%
- Gain = 19.5 dB
- ACPR = –31.5 dBc at 2690 MHz
• Capable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
• Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 1150 mA, P_OUT = 50 W average, ƒ = 2690 MHz, 3GPP WCDMA signal, 3.84 MHz bandwidth,10 dB PAR
@0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Gps
18.0 19.5
—
dB
Drain Efficiency
Adjacent Channel Power Ratio
h_D
ACPR
27
29
—
%
—
–31.5
–30
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 2016-06-21