PTFC262157FH Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz

PTFC262157FH
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max Unit
Drain-source Breakdown Voltage
V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
—
V
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
1.0
µA
V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
10.0
µA
Gate Leakage Current
On-state Resistance
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
1.0
µA
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.05
—
W
Operating Gate Voltage
V_DS = 28 V, I_DQ = 1.1 A
V_GS
—
2.65
—
V
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 150 W CW)
Symbol
V_DSS
V_GS
V_DD
T_J
T_STG
R_qJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.34
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFC262157FH V1 R0
PTFC262157FH V1 R250
Order Code
PTFC262157FHV1R0XTMA1
PTFC262157FHV1R250XTMA1
Package and Description
Shipping
H-34288G-4/2, ceramic open-cavity, Tape & Reel, 50 pcs
earless
H-34288G-4/2, ceramic open-cavity, Tape & Reel, 250 pcs
earless
Data Sheet
2 of 10
Rev. 03.1, 2016-06-21