PTFC262157FH Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz

PTFC262157FH
Typical Performance (data taken in a reference test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1200 mA, ƒ = 2655 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
50
20
40
19
30
Gain
18
20
17
16
32
Efficiency
36
40
44
48
Output Power (dBm)
10
c262157sh-gr2
0
52
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1200 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
50
20
40
19
30
Gain
18
20
17
16
32
Efficiency
36
40
44
48
Output Power (dBm)
10
c262157sh-gr3
0
52
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1200 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
60
IMD Low
IMD Up
ACPR
Efficiency
-30
40
-40
20
-50
32
36
40
44
48
Output Power (dBm)
c262157sh-gr4
0
52
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1200 mA, ƒ = 2655 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
60
IMD Low
IMD Up
ACPR
Efficiency
-30
40
-40
20
-50
32
36
40
44
48
Output Power (dBm)
c262157sh-gr5
0
52
Data Sheet
3 of 10
Rev. 03.1, 2016-06-21