PTFC262157FH Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2620 – 2690 MHz

Typical Performance (cont.)
CW Performance
at selected V_DD
I_DQ = 1200 mA, ƒ = 2620 MHz
21
60
V_DD = 24 V
20 ^{VDD = 28 V}
50
V_DD = 32 V
19
40
18 _Gain
30
17
20
16
10
Efficiency
15
c262157sh-gr9
0
34 36 38 40 42 44 46 48 50 52 54 56
Output Power (dBm)
CW Performance
at selected V_DD
I_DQ = 1200 mA, ƒ = 2690 MHz
21
V_DD = 24 V
60
V_DD = 28 V
20
V_DD = 32 V
50
19
40
18 Gain
30
17
20
16
10
Efficiency
15
c262157sh-gr12
0
34
36
38
40
42
44
46
48
50
52
54
56 ^{c262157sh-gr11}
Output Power (dBm)
PTFC262157FH
CW Performance
at selected V_DD
I_DQ = 1200 mA, ƒ = 2655 MHz
21
V_DD = 24 V
60
V_DD = 28 V
20
V_DD = 32 V
50
19
40
18 Gain
30
17
20
16
10
Efficiency
15
c262157sh-gr11
0
34 36 38 40 42 44 46 48 50 52 54 56 ^{c262157sh-gr10}
Output Power (dBm)
Data Sheet
5 of 10
Rev. 03.1, 2016-06-21