PTFB092707FH Datasheet, PDF (9/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB092707FH
Package Outline Specifications
Package H-37288L-4/2
D 45° x 1.96
[.077]
4X 4.83±0.51
[.190±.020]
V
9.78
CL
[.385]
4X R0.51+-00.1.338
[^{R.020+-.0.00155}]
4.04+-00.1.235
[.159+-.0.00150 ]
1.57
[.062] SPH
25.81
[1.016]
22.86
[.900]
CL
D
G
CL
2X 17.75
[.699]
4.03
[.158]
2X 1.02
[.040]
V
CL
2X 2.16
[.085]
2X 4.06
[.160]
2X 5.46
[.215]
9.40
[.370]
(19.43
[.765])
22.35±0.20
[.880±.008]
CL
H-37288L-4/2_po_01_08-08-2013
1.02
[.040]

S
23.11
[.910]
Dia^Dgrⁱam^graN^mot^Nes^o—^tesu^—nle^usⁿs^leo^st^she^or^thw^eis^rwe ⁱs^sp^ee^sc^pif^eie^cd^if:^ied:
1.1. InItnetreprrpertedtimdimenesniosniosnasnadndtotleorlearnacnecsepsepreAr SAMSME EY1Y41.45.M5M-1-919949.4.
2.2. PrPimrimarayrdyimdimenesniosniosnasraeremmm. A.lAteltrenrantaetedimdimenesniosniosnasraereincinhcehse.s.
3.3. AlAl tlol tleorlearnacnecse±s ±0.01.21727[.0[.0050]5u].nless specified otherwise.
4.4. PiPnsin:sD: D– –drdarina;inG, G– g–agtea;teS, S– s(folaunrcgee;)V– –soVu_Dr_Dc.e, V – V_DD.
5.5. LeLaedadthtichkicnkensess:s0:.01.010+ +00.0.05511/-/0–.0.20525m[m.00[.400+4.0+002./0–0.020/-10]..001 inch].
6.6. GoGldoldplaptlaintgingthtichkicnkensess:s1:.1.414± ±0.03.838mmicricornon[4[545± ±1515mmicricorinocinhc]h. ].
Find the latest and most complete information tabout products and packaging at the Infineon Internet page
(www.infineon.com/rfpower)
Data Sheet
9 of 10
Rev. 03.1, 2016-06-10