PTFB092707FH Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB092707FH
Thermally-Enhanced High Power RF LDMOS FET
270 W, 28 V, 925 – 960 MHz
Description
The PTFB092707FH is a 270-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 925 to
960 MHz frequency band. Features include input and output match-
ing, high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB092707FH
Package H-37288L-4/2
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2150 mA, ƒ = 925 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
50
20 _Gain
40
19
30
18
20
17 _Efficiency
10
16
29
b092707fh-gr1a
0
33 37 41 45 49 53
Output Power (dBm)
Features
• Broadband internal input and output matching
• Typical pulsed CW performance (10 µs pulse
width10%, duty cycle, class AB), 960 MHz, 28 V
- Output power at P_1dB = 250 W
- Efficiency = 52%
- Gain = 18.5 dB
• Typical single-carrier WCDMA performance,
960 MHz, 28 V, 7.5 dB PAR @ 0.01% CCDF,
- Output power = 63 W
- Efficiency = 33%
- Gain = 19.5 dB
- ACPR = –35 dBc @ 3.84 MHz
• Capable of handling 10:1 VSWR @28 V, 220 W
(CW) output power
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 2150 mA, P_OUT = 60 W avg, ƒ = 960 MHz, 3GPP signal, 3.84 MHz channel bandwidth, 8 dB peak/average
@ 0.01% CCDF, 10 MHz spacing
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
18
19
—
dB
h_D
28
29
—
%
IMD
—
–34
–33
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 2016-06-10