PTFB092707FH Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

Typical Performance (cont.)
CW Performance
at selected V_DD
I_DQ = 2150 mA, ƒ = 940 MHz
21
60
20
50
Gain
19
40
V_DD = 24 V
18
V_DD = 28 V
30
V_DD = 32 V
17
20
16 ^Efficiency
10
15
29
33 37 41 45 49
Output Power (dBm)
53
b092707fh-gr5b
0
57
Small Signal CW Performance
V_DD = 28 V, I_DQ = 2150 mA
21
20
Gain
19
-5
IRL
-10
-15
18
-20
17
850
900
950
1000
1050
b092707fh-gr6
-25
1100
Frequency (MHz)
PTFB092707FH
CW Performance
at selected V_DD
I_DQ = 2150 mA, ƒ = 960 MHz
21
60
20
50
Gain
19
40
V_DD = 24 V
18
V_DD = 28 V
30
V_DD = 32 V
17
20
16 Efficiency
10
15
29
33 37 41 45 49
Output Power (dBm)
53
b092707fh-gr5c
0
57
Data Sheet
5 of 10
Rev. 03.1, 2016-06-10