PTFB092707FH Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB092707FH
Typical Performance (data taken in an Infineon test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2150 mA, ƒ = 940 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
50
20
40
Gain
19
30
18
20
17 _Efficiency
10
16
29
b092707fh-gr1b
0
33 37 41 45 49 53
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2150 mA, ƒ = 960 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
21
50
20
40
Gain
19
30
18
20
17 _Efficiency
10
16
29
b092707fh-gr1c
0
33 37 41 45 49 53
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2150 mA, ƒ = 925 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-10
50
IMD Low
-20
IMD Up
40
ACPR
Efficiency
-30
30
-40
20
-50
10
-60
29
b092707fh-gr2a
0
33 37 41 45 49 53
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2150 mA, ƒ = 940 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-10
50
IMD Low
-20
IMD Up
40
ACPR
Efficiency
-30
30
-40
20
-50
10
-60
29
b092707fh-gr2b
0
33 37 41 45 49 53
Output Power (dBm)
Data Sheet
3 of 10
Rev. 03.1, 2016-06-10