PTFB092707FH Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

Typical Performance (cont.)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2150 mA, ƒ = 960 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-10
50
IMD Low
-20
IMD Up
40
ACPR
Efficiency
-30
30
-40
20
-50
10
-60
29
b092707fh-gr2c
0
33 37 41 45 49 53
Output Power (dBm)
PTFB092707FH
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2150 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
925 MHz
940 MHz
-25
960 MHz
IMD Up
IMD Low
-35
-45
-55
29
b092707fh-gr3
33 37 41 45 49 53
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 2150 mA
21
60
20 _Gain
50
19
40
925 MHz
18
940 MHz
30
960 MHz
17
20
16 ^Efficiency
10
15
b092707fh-gr4
0
29 33 37 41 45 49 53 57
Output Power (dBm)
CW Performance
at selected V_DD
I_DQ = 2150 mA, ƒ = 925 MHz
21
60
20 _Gain
50
19
40
V_DD = 24 V
18 V_DD = 28 V
30
V_DD = 32 V
17
20
16 ^Efficiency
10
15
29
33 37 41 45 49
Output Power (dBm)
53
b092707fh-gr5a
0
57
Data Sheet
4 of 10
Rev. 03.1, 2016-06-10