PTFB092707FH Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB092707FH
Broadband Circuit Impedance
Frequency
MHz
900
920
940
960
980
Z Source W
R
jX
1.52
–1.80
1.55
–1.69
1.59
–1.60
1.63
–1.53
1.65
–1.48
Z Load W
R
jX
0.98
–1.65
0.89
–1.54
0.82
–1.42
0.74
–1.29
0.67
–1.16
Z Source
D
Z Load
G
S
Load Pull Performance
Pulsed CW signal: 10 µsec, 10% duty cycle, 28 V, 2.0 A
Class AB
Max Output Power
P_1dB
Max PAE
Freq
Zs
[MHz]
[W]
Zl
Gain
P_OUT P_OUT
PAE
Zl
Gain
P_OUT P_OUT
PAE
[W]
[dB] [dBm] [W]
[%]
[W]
[dB] [dBm] [W]
[%]
920 1.62 – j2.25 0.88 – j1.37 17.3 54.26 267
42.9 2.16 – j0.22 20.8 52.02 159
62.1
940 1.80 – j2.54 0.76 – j1.49 17.0 54.38 274
41.4 2.38 – j0.50 20.9 51.87 154
61.8
960 1.73 – j2.59 0.73 – j1.46 17.4 54.38 274
41.4 2.09 – j0.64 20.8 52.02 159
60.3
Reference Circuit, tuned for 925 – 960 MHz
DUT
PTFB092707FH V1
Reference Circuit Part No. LTN/PTFB092707FH V1
PCB
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, ε_r = 3.66
Find Gerber files for this reference fixture on the Infineon Web site (www.infineon.com/rfpower)
Data Sheet
6 of 10
Rev. 03.1, 2016-06-10