PTFB092707FH Datasheet, PDF (8/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB092707FH
Reference Circuit (cont.)
Assembly Information (cont.)
Component
Description
S1
Transistor
S2
Potentiometer, 2k W
S3
Voltage regulator
Output
C201, C212
C202
C203, C213
C204, C205, C214, C215
C206
C207
C208
C209, C216, C217, C218
C210, C211
Chip capacitor, 10 µF
Chip capacitor, 2.2 pF
Ceramic capacitor, 1 µF, 250 V
Capacitor, 10 μF
Chip capacitor, 4.2 pF
Chip capacitor, 56 pF
Chip capacitor, 3.3 pF
Ceramic capacitor, 4.7 µF, 50 V
Capacitor, 10k pF
Pinout Diagram (top view)
Suggested Manufacturer
Fairchild Semiconductor
Bourns Inc.
Fairchild Semiconductor
P/N
BCP56-10
3224W-1-202E
LM7805
Matsuo
ATC
AVX Corporation
Taiyo Yuden
ATC
ATC
ATC
Murata Electronics North America
ATC
281M5002106K
ATC100B2R2CW
2225PC105KAT1A
UMK325C7106MM-T
ATC100B4R2CT
ATC100B560JT
ATC100B3R3CW
GRM32ER71H475KA88L
ATC200B103MW50X
V
D
V
h -3 7 28 8 L -4 /2 _p d _ 3 -2 7- 2 01 4
G
S
Lead connections for PTFB092707FH
Pin
D
G
S (flange)
V
Description
Drain
Gate
Source
Supply voltage, V_DD
Data Sheet
8 of 10
Rev. 03.1, 2016-06-10