PTFA220041M_16 Datasheet, PDF(9/18 Page) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

PTFA220041M_16 Datasheet, PDF (9/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz

◁

Confidential, Limited Internal Distribution

Reference Circuit, 1842 MHz (cont.)

PTFA220041M

VDD

C801 R802 C803

802

C103

R804

R805

R801

R803

C206

C204

C205

C105

C104

DUT

C102 C101 R102

C106

C107

C202 C203 C201

C207

PTFA220041M

Reference circuit assembly diagram (not to scale)

RO4350, .020

(73)

ï°ï°ï´ï±

ï°ï°

Data Sheet â DRAFT ONLY

9 of 18

Rev. 10.1, 2016-06-01

▷