PTFA220041M_16 Datasheet, PDF (11/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz

Confidential, Limited Internal Distribution
Typical Performance, 940 MHz
Two-carrier WCDMA 3GPP
V_DD = 28 V, I_DQ = 50 mA, ƒ = 940 MHz, 3GPP
WCDMA, P/AR = 8:1, 10 MHz carrier spacing
BW 3.84 MHz
22
50
Gain
21
40
20
30
Efficiency
19
20
18
10
17
25
27
29
31
33
Output Power (dBm)
0
35
Two-tone Drive-up
V_DD = 28 V, I_DQ = 50 mA,
ƒ₁ = 939.9 MHz, ƒ₂ = 940 MHz
-5
-10
-15
-20
-25
-30
-35
-40
33
Efficiency
IMD3
34
35
36
37
38
Output Power, PEP (dBm)
55
50
45
40
35
30
25
20
39
PTFA220041M
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 50 mA, ƒ = 940 MHz
22
70
21
Gain
60
20
50
19
40
Efficiency
18
30
17
20
30 31 32 33 34 35 36 37 38
Output Power (dBm)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 50 mA,
ƒ₁ = 939.9 MHz, ƒ₂ = 940 MHz
22
60
Gain
21
50
20
40
19
Efficiency
30
18
33
34
35
36
37
38
Output Power, PEP (dBm)
20
39
Data Sheet – DRAFT ONLY
11 of 18
Rev. 10.1, 2016-06-01