PTFA220041M_16 Datasheet, PDF (17/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz

PTFA220041M
Confidential, Limited Internal Distribution
Package Outline Specifications
Package PG-SON-10

>@

>@


>@ >@

>@3/$&(6
;
>@3/$&(6
    
6

>@

>@
,1'(;
0$5.,1*
7239^ ,(:
;
>@3/$&(6

>@
6,'(9,(:
3*621BSRBB

>@%27+6,'(6
>@
   
;
>@3/$&(6

>@
%277209,(:
,1'(;
0$5.,1*

Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994
2. Primary dimensions are mm; alternate dimensions are inches
3. All tolerances ± 0.1 [.004]
4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm
5. Pins: S source; 1 – 5 gate, 6 - 10 = drain
6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet – DRAFT ONLY
17 of 18
Rev. 10.1, 2016-06-01