PTFA220041M_16 Datasheet, PDF (2/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz

PTFA220041M
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 50 mA, P_OUT = 5 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
—
18.5
—
dB
η_D
—
37
—
%
IMD
—
–30
—
dBc
Input Return Loss
IRL
—
–10
—
dB
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 A
V_DS = 28 V, I_DQ = 50 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
2.1
—
Typ
—
—
2.01
2.7
—
Max
—
1.0
—
3.1
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 5 W CW)
Moisture Sensitivity Level
Level
3
Test Standard
IPC/JEDEC J-STD-020
Symbol
V_DSS
V_GS
T_J
T_STG
R_θJC
Value
65
–0.5 to +12
175
–40 to +150
5.5
Unit
V
V
°C
°C
°C/W
Package Temperature
260
Temperature Unit
°C
Ordering Information
Type and Version
Order Code
PTFA220041M V4 R1K PTFA220041MV4R1KXUMA1
Package and Description
Shipping
PG-SON-10, molded plastic, SMD Tape & Reel, 1,000 pcs
Data Sheet – DRAFT ONLY
2 of 18
Rev. 10.1, 2016-06-01