PTFA220041M_16 Datasheet, PDF (5/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz

Confidential, Limited Internal Distribution
Typical Performance, 1842 MHz (cont.)
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 50 mA, ƒ = 1842 MHz
22
60
Gain
20
50
18
40
16
+85°C
30
+ 25° C
Efficiency ^{–30°C}
14
20
30 31 32 33 34 35 36 37 38
Output Power (dBm)
-10
-20
-30
-40
-50
-60
32
Intermodulation Distortion
vs. Output Power
V_DD = 28 V, I_DQ = 50 mA,
ƒ₁ = 1841.9 MHz, ƒ₂ = 1842 MHz
3rd Order
5th
7th
34
36
38
40
Output Power, PEP (dBm)
PTFA220041M
Intermodulation Distortion
vs. Tone Spacing
V_DD = 28 V, I_DQ = 50 mA, ƒ = 1842 MHz,
P_OUT (PEP) = 4 W
-10
-20
3rd Order
-30
5th
-40
-50
7th
-60
0
20
40
60
80
100
Tone Spacing (MHz)
Data Sheet – DRAFT ONLY
5 of 18
Rev. 10.1, 2016-06-01