PTFA220041M_16 Datasheet, PDF (3/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz

Confidential, Limited Internal Distribution
Typical Performance, 1842 MHz (data taken in Infineon test fixture)
PTFA220041M
Two-carrier WCDMA 3GPP
V_DD = 28 V, I_DQ = 50 mA, ƒ = 1842 MHz, 3GPP
WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing,
BW 3.84 MHz
20
50
Gain
19
40
18
30
17
20
Efficiency
16
10
15
25
27
29
31
33
Output Power (dBm)
0
35
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 50 mA, 3GPP WCDMA,
PAR = 8.0 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-15
-20
IM3 Lower
-25
IM3 Upper
-30
-35
-40
ACPR
-45
-50
25
27
29
31
33
35
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 50 mA, ƒ = 1842 MHz, 3GPP
WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing,
BW 3.84 MHz
0
50
-10
IMD Up
40
-20
30
Efficiency
-30
20
-40
-50
25
IMD Low ₁₀
ACPR
0
27
29
31
33
35
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 50 mA, ƒ = 1842 MHz
20
65
Gain
19
55
18
45
17 ^Efficiency
35
16
25
15
15
30 31 32 33 34 35 36 37 38
Output Power (dBm)
Data Sheet – DRAFT ONLY
3 of 18
Rev. 10.1, 2016-06-01