PTFA220041M_16 Datasheet, PDF (7/18 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 4 W, 28 V, 700 – 2200 MHz

PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 1842 MHz
L1
22 nH
R804
2000 Ohm
TL103
TL107
3
1
2
4
S2
TL101
TL105
R805
10 Ohm S3
3
R803
500 Ohm
TL106
R102
10 Ohm
GATE DUT
TL104
TL118
2
1
3
4
Er=3.48
H=20 mil
RO/RO4350B1
C101
6.2 pF
TL102
C105
7.5 pF
TL116
C104
7.5 pF
TL113
TL1172
TL114 2
1
3
                 
1
3
4
4
TL115
TL112
C107
7.5 pF
C106
7.5 pF
VDD
28 V
C801
1000000 pF
S5
8
In
1
Out
NC
NC
4
2 3 6 75
C802
1000000 pF
C803
1000000 pF
R801
1200 Ohm
R802
1300 Ohm
2C
1
4
B
3E
S4
TL110
TL111
1
2
3
C102
4.7 pF
TL109
C103
12 pF
TL108
RF_IN
DCVS
V1
Reference circuit input schematic for ƒ = 1842 MHz
TL225 TL224 TL226 TL216
TL215
TL201
DRAIN DUT
TL214
C204
100000 pF
C206
2200000 pF
C205
12 pF
TL206
2
1
3
TL223 TL207
3
2
1
TL205
3
2
1
TL211 TL202
3
2
1
VDD
28 V
TL203
L2
22 nH
TL204
TL212
TL210 TL208
3
2
1
TL209
TL213 TL222
TL221
1
2
3
1
2
3
C202
4.7 pF
C203
4.7 pF
TL220 TL219


1
2

3
C201
3.6 pF
TL217
C207
12 pF
TL218
RF_OUT
Reference circuit output schematic for ƒ = 1842 MHz
Data Sheet – DRAFT ONLY
7 of 18
Rev. 10.1, 2016-06-01