PTFA181001GL_09 Datasheet, PDF (9/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz

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Package Outline Specifications
Package PG-63248-2
4.83±0.51
[.190±.020]
45° X 2.72
[45° X .107]
CL
45° X 1.78
[45° X .070]
2X R1.63 ^CL
[R.064]
3X[RR.00.2501_{+–+–..001041..125045]}
PTFA181001GL
6.
9.78 ± 0.08
[.385 ± .003]
20.27
[.798]
CL
3.63^{+–00..2153}
[.143^{+–..001005} ]
0.064
PG-68248-2(G)_po_8-28-08
(.0025)
–A–
34.04 ± 0.08
[1.340 ± .003]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
5. Gold plating thickness: < 0.254 micron [< 10 microinch]
6. Tabs may protrude 0.13 [.005] max from body.
7. Pins: D = drain, S = source, G = gate.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
9 of 10
Rev. 03, 2009-04-01