PTFA181001GL_09 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz

PTFA181001GL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
100 W, 1805 – 1880 MHz
Description
The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE
and WCDMA power amplifier applications in the 1805 to 1880 MHz
band. Features include input and output matching, and thermally-
enhanced open-cavity package with copper flange. Manufactured
with Infineon's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PTFA181001GL
Package PG-63248-2
PTFA181001HL
Package PG-64248-2
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 750 mA, ƒ = 1880 MHz, 3GPP WCDMA
signal, PAR = 8 dB, 10 MHz carrier spacing
-30
35
-35
Efficiency
30
-40
IM3
-45
25
20
ACPR
15
-50
10
-55
5
34 36 38 40 42 44 46
Average Output Power (dBm)
Features
• Thermally-enhanced, plastic open-cavity
(EPOC™) package with copper flange, Pb-free
and RoHS compliant
• Broadband internal matching
• Typical EDGE performance at 1880 MHz, 28 V
- Average output power = 45 W
- Linear Gain = 16.5 dB
- Efficiency = 36%
- EVM RMS = 1.8%
• Typical CW performance, 1880 MHz, 28 V
- Output power at P–1dB = 120 W
- Gain 15.5 dB
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability
• Capable of handling 10:1 VSWR @ 28 V,
100 W (CW) output power
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 750 mA, P_OUT = 45 W (AVG), ƒ = 1880 MHz
Characteristic
Symbol Min Typ
Max
Unit
Error Vector Magnitude
RMS EVM
—
1.8
—
%
Modulation Spectrum @ 400 KHz
ACPR
—
–61
—
dBc
Modulation Spectrum @ 600 KHz
ACPR
—
–73
—
dBc
Gain
Drain Efficiency
G_ps
—
16.5
—
dB
η_D
—
36
—
%
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03, 2009-04-01