PTFA181001GL_09 Datasheet, PDF (7/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz

PTFA181001GL
Confidential, Limited Internal Distribution
Reference Circuit
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
VDD
BCP56
C2
0.001µF
C3
0.001µF
R3
2K V
R4
2K V
R5
10 V
C4
10µF
35V
R6
5.1K V
C5 R7
C6
0.1µF 5.1K V 1µF
R8
2K V
C7
0.01µF
C8
10pF
l5
R9
10 V
C9
10pF
J1
l1
l2
l3
l4
DUT
l6
l7
C10
0.6pF
L1
C11 C12
10pF 1µF
C13
10µF
50V
l8
C19
1.5pF
l10 l11
l12 l13
C20
1.5pF
l9
L2
C15
C16
10pF 1µF
C17
10µF
50V
VDD
C14
10µF
50V
C22
10pF
l14
l15
J2
C21
0.8pF
C18
10µF
50V
V66100-G9222-D683-01-7606.dwg
Reference circuit schematic for ƒ = 1880 MHz
Circuit Assembly Information
DUT
PCB
PTFA181001GL
0.76 mm [.030"] thick, ε_r = 4.5
LDMOS Transistor
Rogers TMM4
2 oz. copper
Microstrip Electrical Characteristics at 1880 MHz¹
l1
0.322 λ, 50.0 Ω
l2
0.172 λ, 38.0 Ω
l3
0.016 λ, 11.4 Ω
l4
0.024 λ, 60.0 Ω
l5
0.273 λ, 60.0 Ω
l6
0.019 λ, 6.9 Ω
l7
0.044 λ, 6.9 Ω
l8, l9
0.298 λ, 52.0 Ω
l10
0.039 λ, 4.9 Ω
l11 (taper)
0.037 λ, 4.9 Ω / 10.3 Ω
l12 (taper)
0.033 λ, 10.3 Ω / 41.2 Ω
l13
0.055 λ, 41.2 Ω
l14
0.058 λ, 41.2 Ω
l15
0.327 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
27.43 x 1.37
14.73 x 2.16
1.27 x 10.16
2.24 x 0.99
24.00 x 0.99
1.52 x 17.78
3.43 x 17.78
26.16 x 1.27
3.10 x 25.65
2.92 x 25.65 / 11.43
2.79 x 11.43 / 1.91
4.70 x 1.91
4.95 x 1.91
28.98 x 1.37
Dimensions: L x W (in.)
1.080 x 0.054
0.580 x 0.085
0.050 x 0.400
0.088 x 0.039
0.945 x 0.039
0.060 x 0.700
0.135 x 0.700
1.030 x 0.050
0.122 x 1.010
0.115 x 1.010 / 0.450
0.110 x 0.450 / 0.075
0.185 x 0.075
0.195 x 0.075
1.141 x 0.054
Data Sheet
7 of 10
Rev. 03, 2009-04-01