PTFA181001GL_09 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz

PTFA181001GL
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Edge EVM and Modulation Spectrum
vs. Quiescent Current
V_DD = 28V, ƒ = 1880 MHz, P_OUT = 46.5 dBm
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.65
-10
EVM
-20
-30
-40
400 KHz ^-50
-60
-70
600 KHz ^-80
-90
0.70 0.75 0.80 0.85 0.90
Quiescent Current (A)
EDGE Modulation Spectrum Performance
V_DD = 28 V, I_DQ = 750 mA, ƒ = 1880 MHz
-20
-30
-40
-50
-60
-70
-80
-90
-100
37
45
Efficiency
40
35
400 kHz
30
25
20
15
600 kHz
10
5
39 41 43 45 47 49
Output Power (dBm)
EDGE EVM Performance
V_DD = 28 V, I_DQ = 750 mA, ƒ = 1880 MHz
8
45
7
Efficiency
40
6
35
5
30
4
25
3
20
2
EVM
15
1
10
0
5
37
39
41
43
45
47
49
Output Power (dBm)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V_DD = 28 V, I_DQ = 750 mA, ƒ₁ =1879 MHz, ƒ₂ = 1880 MHz
-20
-25
-30
3rd Order
-35
-40
-45
5th
-50
-55
7th
-60
-65
37
39
41
43
45
47
49
Output Power, Avg. (dBm)
Data Sheet
3 of 10
Rev. 03, 2009-04-01