PTFA181001GL_09 Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 750 mA, ƒ = 1880 MHz
18
65
17
55
Gain
16
45
15
35
14
25
Efficiency
13
15
12
5
36 38 40 42 44 46 48 50 52
Output Power (dBm)
PTFA181001GL
Output Power (at 1 dB Compression)
vs. Supply Voltage
I_DQ = 750 mA, ƒ =1880 MHz
52.0
51.5
51.0
50.5
50.0
49.5
24
26
28
30
32
Supply Voltage (V)
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 750 mA, ƒ = 1880 MHz
T_CASE = 25°C
40 T_CASE = 90°C
-10
35
Efficiency
-20
30
-30
25
20 ^{ACP FC – 0.75 MHz}
-40
-50
15
10
-60
5
ACPR F_C + 1.98 MHz ^-70
0
-80
33 35 37 39 41 43 45 47
Output Power (dBm), Avg.
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.15 A
0.44 A
0.73 A
1.10 A
2.20 A
3.30 A
4.41 A
5.51 A
0
20
40 60 80 100
Case Temperature (°C)
Data Sheet
5 of 10
Rev. 03, 2009-04-01