PTFA181001GL_09 Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz

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Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
1805
1830
1850
1860
1880
Z Source Ω
R
jX
5.02
–6.23
4.91
–6.10
4.82
–6.13
4.78
–6.20
4.70
–6.36
Z Load Ω
R
jX
1.52
–3.98
1.49
–3.97
1.47
–3.79
1.46
–3.75
1.44
–3.67
See next page for reference circuit
PTFA181001GL
Z₀ = 50 Ω
Z Source
1805 MHz
1880 MHz
0.1
Z Load
1805 MHz
1880 MHz
0.2
Data Sheet
6 of 10
Rev. 03, 2009-04-01