PTFA181001GL_09 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805-1880 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Broadband CW Performance (at P–1dB)
V_DD = 28 V, I_DQ = 750 mA
19
60
18 ^Efficiency
55
17
50
Output Power
16
45
15 _Gain
40
14
1805
1818
1831 1844 1857
Frequency (MHz)
1870
35
1883
PTFA181001GL
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, ƒ₁ = 1879, ƒ₂ = 1880 MHz
-20
-25
375 mA
-30
-35
-40
1125 mA
-45
-50
-55
750 mA
-60
-65
37
39
41
43
45
47
49
Output Power, Avg. (dBm)
CW Broadband Performance
V_DD = 28 V, I_DQ = 750 mA, P_OUT = 47 dBm
55
40
50
30
Gain
45
20
40
10
35
Efficiency
0
30
Return Loss
-10
25
-20
20
1805
1818
1831 1844 1857
Frequency (MHz)
1870
-30
1883
Power Sweep
V_DD = 28 V, ƒ = 1880 MHz
17.0
16.5
16.0
I_DQ = 1125 mA
15.5
15.0
14.5
I_DQ = 375 mA
I_DQ = 750 mA
14.0
36 38 40 42 44 46 48 50 52
Output Power (dBm)
Data Sheet
4 of 10
Rev. 03, 2009-04-01