PTFA081501E Datasheet, PDF (9/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz

PTFA081501E
PTFA081501F
Package Outline Specifications (cont.)
Package H-31248-2
( 45° X 2.72
[.107])
CL
2X 4.83±0.51
[.190±.020]
D
LID 9.40^{+–00..1150}
FLANGE 9.78 ^{[.370+–..000064 ]}
[.385]
19.43±0.51
CL ^{[.765±.020]}
4[XRR.002.500_+–.8_{.0010+–5500]}..132871
SPH 1.57
[.062]
G
2X 12.70
[.500]
19.81±0.20
[.780±.008]
CL
1.02
[.040]
0.0381 [.0015] -A-
3.61±0.38
[.142±.015]
S
20.57
[.810]
248-cases:h-31248-2_po
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron (min) [100 microinch (min)]
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
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Data Sheet
9 of 10
Rev. 03, 2007-03-09