PTFA081501E Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz

PTFA081501E
PTFA081501F
Typical Performance (data taken in a production test fixture)
Linear Broadband Performance
V_DD = 28 V, I_DQ = 950 mA, P_OUT Avg. = 48.75 dBm
50
Efficiency
45
40
30
20
Gain
10
35
0
30
Return Loss ^-10
25
-20
20
864
873
882
891
Frequency (MHz)
-30
900
Broadband CW Performance
V_DD = 28 V, I_DQ = 950 mA, P_OUT = P–1dB
20
70
19 _Efficiency
65
18
60
Gain
17
55
Output Power
16
864 870 876 882 888 894
Frequency (MHz)
50
900
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V_DD = 28 V, I_DQ = 950 mA, ƒ₁ = 899 MHz, ƒ₂ = 900 MHz
-20
-30
-40 ^{3rd Order}
-50
5th
-60
7th
-70
-80
35
38
41
44
47
50
Output Power, Avg. (dBm)
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, ƒ₁ = 899 MHz, ƒ₂ = 900 MHz
-25
-30
I_DQ = 675 mA
-35
-40 ^{IDQ = 950 mA}
-45
-50
-55 _{IDQ = 1125 mA}
-60
36 38 40 42 44 46 48 50
Output Power, Avg. (dBm)
Data Sheet
3 of 10
Rev. 03, 2007-03-09