PTFA081501E Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz

PTFA081501E
PTFA081501F
Reference Circuit
C1
0.001µF
R2
1.3K V
1R.21K V
QQ1
LM7805
Q1
VDD
BCP56
C0.2001µF _C3
0.001µF
R3
2K V
R4
2K V
R5
5.1V
R6
10V
L1
l5
VDD
C4
10µF
0C.51µF 5R.17K
0C.61 µF
0C.701 µF
3C38pF
35V
R8
C13
C14
33pF
1µF
C15
10µF
50V
C16
0.1µF
C17
10µF
50V
10V
l7
C10
33pF
DUT
RF_ IN
l1
l2
l3
l4
l6
C23
7.5pF
C26
33pF
l9
l10
l11
l12
l13
RF_ O U T
C9
2.1pF
C11
7.5pF
C12
10pF
l8
C24
7.5pF
C25
2.7pF
L2
C27
0.5pF
C18
C19
33pF 1µF
C20
10µF
50V
C21
0.1µF
C22
10µF
50V
Reference circuit block diagram for ƒ = 900 MHz
Circuit Assembly Information
DUT
PCB
PTFA081501E or PTFA081501F
0.76 mm [.030"] thick, ε_r = 4.5
Microstrip Electrical Characteristics at 900 MHz¹
l1
l2
l3
l4
l5
l6
l7, l8
l9
l10
l11
l12, l13
0.016 λ, 50.0 Ω
0.053 λ, 50.0 Ω
0.102 λ, 50.0 Ω
0.045 λ, 50.0 Ω
0.153 λ, 68.0 Ω
0.058 λ, 7.5 Ω
0.125 λ, 50.0 Ω
0.036 λ, 7.9 Ω
0.141 λ, 7.9 Ω
0.149 λ, 38.0 Ω
0.013 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
LDMOS Transistor
Rogers TMM4
2 oz. copper
Dimensions: L x W (mm)
2.90 x 1.35
9.40 x 1.35
18.29 x 1.35
8.10 x 1.35
27.43 x 0.76
9.40 x 16.26
22.61 x 1.27
5.72 x 15.24
22.61 x 15.24
26.16 x 2.16
2.29 x 1.35
Dimensions: L x W (in.)
0.114 x 0.053
0.370 x 0.053
0.720 x 0.053
0.319 x 0.053
1.080 x 0.030
0.370 x 0.640
0.890 x 0.050
0.225 x 0.600
0.890 x 0.600
1.030 x 0.085
0.090 x 0.053
Data Sheet
6 of 10
Rev. 03, 2007-03-09