PTFA081501E Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz

Typical Performance (cont.)
Power Sweep
V_DD = 28 V, ƒ = 900 MHz
19
I_DQ = 1350 mA
18 I_DQ = 950 mA
I_DQ = 450 mA
17
36 38 40 42 44 46 48 50 52 54
Output Power (dBm)
PTFA081501E
PTFA081501F
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 950 mA, ƒ = 900 MHz
21
70
20
60
19 _Gain
50
18
40
17
30
16 ^Efficiency
20
15
10
14
0
36 38 40 42 44 46 48 50 52 54
Output Power (dBm)
Output Power (at 1 dB Compression)
vs. Supply Voltage
I_DQ = 950 m A, ƒ = 900 MHz
54.0
53.5
53.0
52.5
52.0
51.5
51.0
24
26
28
30
32
Supply Voltage (V)
Three-carrier CDMA 2000 Performance
V_DD = 28 V, I_DQ = 950 mA, ƒ = 900 MHz
50
-35
40
Efficiency
-40
30
-45
20
10
0
36
-50
ACP Up
ACP Low _-55
ALT Up
38 40 42 44 46 48
Output Power (dBm), Avg.
-60
50
Data Sheet
4 of 10
Rev. 03, 2007-03-09