PTFA081501E Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz

PTFA081501E
PTFA081501F
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 864 – 900 MHz
Description
The PTFA081501E and PTFA081501F are thermally-enhanced,
150-watt, internally matched GOLDMOS^® FETs intended for ultra-
linear applications. They are characaterized for CDMA and
CDMA2000 operation from 864 to 900 MHz. Thermally-enhanced
packages provide the coolest operation available. Full gold
metallization ensures excellent device lifetime and reliability.
PTFA081501E
Package H-30248-2
PTFA081501F
Package H-31248-2
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 950 mA, ƒ = 900 MHz
50 ^{TCASE = 25°C}
-30
T_CASE = 90°C
40
-40
Adj 750 kHz
30
-50
20
Efficiency
10
-60
Alt1 1.98 MHz ^-70
0
-80
32 34 36 38 40 42 44 46 48
Output Power (dBm), Avg.
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical CDMA2000 performance at 900 MHz, 28 V
- Average output power = 35 W
- Linear Gain = 18 dB
- Efficiency = 34%
- Adjacent channel power = –50 dBc
• Typical CW performance, 900 MHz, 28 V
- Output power at P–1dB = 165 W
- Efficiency = 62%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
170 W (CW) output power
RF Characteristics
CDMA2000 3-Carrier Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
V_DD = 28 V, I_DQ = 950 mA, P_OUT = 35 W average, ƒ = 900 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain
G_ps
—
18
—
dB
Drain Efficiency
Adjacent Channel Power Ratio
η_D
—
34
—
%
ACPR
—
–50
—
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03, 2007-03-09