PTFA081501E Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 150 W, 864-900 MHz

Typical Performance (cont.)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.56 A
1.03
3.10 A
1.02
4.66 A
1.01
6.22 A
7.76 A
1.00
9.32 A
0.99
10.88 A
12.44 A
0.98
14.00 A
0.97
0.96
-20
0
20 40 60 80 100
Case Temperature (°C)
PTFA081501E
PTFA081501F
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
864
873
882
891
900
Z Source Ω
R
jX
13.20
4.69
13.30
4.75
13.85
4.94
14.59
5.00
15.01
4.91
Z Load
900 MHz
864 MHz
Z Source
900 MHz
864 MHz
Z Load Ω
R
jX
1.35
4.73
1.28
4.80
1.14
4.99
1.06
5.27
1.01
5.43
Z₀ = 50 Ω
Data Sheet
5 of 10
Rev. 03, 2007-03-09