PTFA043002E Datasheet, PDF (9/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz

PTFA043002E
Package Outline Specifications
Package H-30275-4
2X 45°±5° X 1.19
[.047]
16.61±0.51
[.654±.020]
9.40
+0.10
–0.15
[.370
+.004
–.006
]
CL
4X 3.23±0.25
[.127±.010]
CL
13.72
[.540]
D
CL
D
G
G
4X 11.68
[.460]
35.56
[1.400]
2X R 1.59
[.063]
2X 3.18
LID 9.14
+0.10
–0.15
[.125]
[.360 ^{+–..000046}]
Flange 10.16
[.400]
S
31.24±0.28
[1.230±.011]
1.63
[.064]
4.55±0.38
[.179±.015]
41.15
[1.620]
2.18
[.086] SPH
0.038 [.0015] -A-
H-30275-4
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.13 +0.051/–0.025 [.005 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 11.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
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Data Sheet
9 of 10
Rev. 03.1, 2009-02-20