PTFA043002E Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz

Typical Performance (cont.)
DVB Adjacent Channel Power
V_DD = 32 V, I_DQ = 1.55 A,
63 W DVB s ignal
-50
-55
+4.2 MHz
-60
25
Efficiency
20
15
-65
10
-70
5
–4.2 MHz
-75
0
450 500 550 600 650 700 750 800 850 900
Frequency (MHz)
PTFA043002E
Two-tone Drive-up at 800 MHz
(in narrowband circuit)
V_DD = 32 V, I_DQ = 1.55 A, ƒ₁ = 799.5 MHz, ƒ₂ = 800.5 MHz
0
-10
-20
-30
-40
-50
-60
-70
-80
0
40
Drain Efficiency
35
Gain
3rd Order ³⁰
25
5th
20
15
7th ¹⁰
5
0
50 100 150 200 250 300 350
Output Power, PEP (W)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.29 A
0.88 A
1.47 A
2.20 A
4.41 A
6.61 A
8.81 A
11.02 A
0
20
40
60
80 100
Case Temperature (°C)
Data Sheet
4 of 10
Rev. 03.1, 2009-02-20