PTFA043002E Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz

PTFA043002E
Reference Circuit
RF_IN
C33
0.001µF
R10
1.3K V
Q1
BCP56
C34
0.001µF
R11
1.2K V
QQ1
LM7805
C35
0.001µF
V BIAS
R12
R13
22V
2K V
R14
100 V
VDD
VBIAS
R7
3.3K V
C10
0.1µF
R8
10V
C11
10µF
35V
R9
C12
5.1KV ^75pF
TB 2
C9
75pF
l13
l9 l10 l11 l12
l1
C1
2.7pF
Sl1
TB 1
l8
C2
15pF
l2
VBIAS
C3
75pF
l3
C4
2.4pF
C5
8.2pF
l4 l5 l6
R1
100 V
R2
2KV
R3
22V
R4
3.3K V
C6
0.1µF
R5
10 V
C7
10µF
35V
l7
R6
C8
5.1KV 75pF
V DD
DUT
L1
C17
C18
C19
75pF 1µF
1µF
l14
C20
10µF
50V
C21
10µF
50V
C22
0.01µF
C17
75pF
TB 4
l16
l18
l20 l22
C13 C14
8.2pF ^4.8pF
l17
l19
C15
2.4pF
C16
75pF
l21
l23
l15
C24
C25
C26
75pF 1µF
1µF
L2
C27
10µF
50V
l24
6C.380pF
l25
C31
6.2pF
VDD
C28
10µF
50V
C29
0.01µF
Sl2
TB 3
l26
C32
2.7pF
RF_OUT
Reference circuit schematic for 470 to 860 MHz—rated for 300 W (PEP) only
a043002e_bd-02_070212
Circuit Assembly Information
DUT
Circuit board
PTFA043002E
ε 0.25 mm [.010”] over .635 mm [.025”] thick, _r = 10.2
copper: 10 mils top 25 mils bottom
LDMOS transistor
Rogers 3010, multilayer
Microstrip
Electrical Characteristics at 860 MHz¹
TB1, TB2, TB3,
Broadside coupled striplines
TB4
Sl1, Sl2
0.017 λ, 15.6 Ω
l1, l26
0.250 λ, 39.0 Ω
l2, l8, l24, l25
0.004 λ, 26.0 Ω
l3, l9
0.049 λ, 6.1 Ω
l4, l10
0.038 λ, 6.1 Ω
l5, l11
0.067 λ, 4.2 Ω
l6, l12
0.055 λ, 3.8 Ω
l7, l13
0.216 λ, 41.0 Ω
l14, l15
0.307 λ, 41.0 Ω
l16, l17
0.045 λ, 3.8 Ω
l18, l19
0.112 λ, 3.8 Ω
l20, l21
0.024 λ, 3.8 Ω
l22, l23
0.022 λ, 4.7 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
14.63 x 1.70
33.02 x 1.32
0.51 x 2.54
5.59 x 15.24
4.45 x 15.24
7.62 x 22.86
6.25 x 25.40
28.45 x 1.22
40.39 x 1.22
5.08 x 25.40
12.70 x 25.40
2.74 x 25.40
2.54 x 20.32
2.54 x 20.32
Dimensions: L x W (in.)
0.576 x 0.067
0.075 x 0.067
1.300 x 0.052
0.020 x 0.100
0.220 x 0.600
0.175 x 0.600
0.300 x 0.900
0.246 x 1.000
1.120 x 0.048
1.590 x 0.048
0.200 x 1.000
0.500 x 1.000
0.108 x 1.000
0.100 x 0.800
Data Sheet
6 of 10
Rev. 03.1, 2009-02-20