PTFA043002E Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz

PTFA043002E
Thermally-Enhanced High Power RF LDMOS FET
300 W, 470 – 860 MHz
Description
The PTFA043002 is a 300-watt, internally-matched, laterally-diffused,
GOLDMOS ^® push-pull FET intended for analog and digital broadcast,
including 8VSB and COFDM applications from 470 to 860 MHz. The
thermally-enhanced package provides the coolest operation available. Full
gold metallization ensures excellent device lifetime and reliability.
PTFA043002E
Package H-30275-4
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
Two-tone Drive-up at 800 MHz
(in broadband circuit)
V_DD = 32 V, I_DQ = 1.55 A,
ƒ₁ = 799.5 MHz, ƒ₂ = 800.5 MHz
45
3rd Order
Efficiency ₄₀
35
30
25
7th ²⁰
5th
15
10
5
0
50 100 150 200 250 300 350
Output Power (W PEP)
Features
• Thermally-enhanced package
• Broadband internal matching
• Typical 8VSB performance
- Average output power = 100 W
- Gain = 16 dB
- Adjacent < –33 dBc
• Integrated ESD protection: Human Body
Model, Class 2 (minimum)
• Excellent thermal stability
• Low HCI drift
• Pb-free and RoHS compliant
• Capable of handling 5:1 VSWR at 32 V,
300 W (CW) output power
RF Characteristics
ATSC 8VSB Characteristics (broadband fixture, push-pull configuration)
(V_DD = 32 V, P_OUT = 100 W_AVG, I_DQ = 1.55 A, ƒ = 800 MHz)
Characteristic
Common Source Power Gain
Drain Efficiency
FIrst Adjacent
Symbol Min Typ
G_ps
—
16
η_D
—
28
IMD
—
–33
Max
—
—
—
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 03.1, 2009-02-20