PTFA043002E Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz

PTFA043002E
RF Characteristics (cont.)
Two-tone Measurements (tested in narrowband test fixture)
V_DD = 32 V, I_DQ = 1.55 A, P_OUT = 300 W_PEP, ƒ = 860 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
G_ps
16
17.5
Drain Efficiency
η_D
38
41
Intermodulation Distortion
IMD
—
–29
Max
—
—
–28
Unit
dB
%
dBc
DC Characteristics (one side)
Characteristic
Conditions
Symbol Min Typ
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA/side V_(BR)DSS
65
—
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
On-State Resistance
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.08
Operating Gate Voltage
V_DS = 28 V, I_DQ = 0.75 A/side
V_GS
2.0
2.5
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 300 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
761
4.35
–40 to +150
0.23
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTFA043002E
Package Outline
H-30275-4
Package Description
Thermally-enhanced, flange mount
Marking
PTFA043002E
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Rev. 03.1, 2009-02-20