PTFA043002E Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz

PTFA043002E
Broadband Circuit Impedance Data
V_DD = 28 V, I_DQ = 2.0A, P_OUT = 30 W AVG Two-carrier WCDMA
Z Source
G
G
D ^{Z Load}
S
D
Frequency
MHz
450
475
500
525
550
575
600
625
650
675
700
725
750
775
800
825
850
875
900
Z Source Ω
R
jX
3.00
–4.61
3.02
–3.71
3.18
–2.96
3.43
–2.36
3.75
–1.90
4.10
–1.61
4.42
–1.47
4.66
–1.44
4.79
–1.47
4.84
–1.50
4.84
–1.50
4.82
–1.46
4.82
–1.42
4.83
–1.41
4.80
–1.46
4.69
–1.54
4.43
–1.61
4.04
–1.54
3.57
–1.27
Z Load Ω
R
jX
1.78
–3.26
1.85
–2.63
1.99
–2.09
2.18
–1.64
2.41
–1.28
2.64
–1.03
2.85
–0.87
3.01
–0.77
3.10
–0.70
3.15
–0.63
3.17
–0.53
3.20
–0.42
3.24
–0.31
3.30
–0.22
3.33
–0.18
3.30
–0.16
3.17
–0.13
2.95
–0.01
2.67
0.27
Z₀ = 50 Ω
Z Load
900 MHz
900 MHz
Z Source
450 MHz
0.1
450 MHz
0 ^.2
0.3
Data Sheet
5 of 10
Rev. 03.1, 2009-02-20