PTFA043002E Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz

PTFA043002E
Typical Performance (data taken in a broadband test fixture)
Two-tone IMD Performance
V_DD = 32 V, I_DQ = 1.55 A, IMD = –28 dBc
400
60
300
50
Output Power (PEP)
200
40
100
Drain Efficiency 30
0
400
500
600
700
800
Frequency (MHz)
20
900
8VSB Performance vs. Frequency
@ 100 W Average Power
V_DD = 32 V, I_DQ = 1.55 A, IMD = –28 dBc
-30
30
Efficiency
-32
26
-34
22
Adjacent
-36
18
-38
14
-40
400
500
600
700
800
Frequency (MHz)
10
900
Analog NTSC Performance
V_DD = 32 V, I_DQ = 1.55 A
350
300
250
200
150
100
50
0
400
55
Output Power ⁵⁰
45
Efficiency ₄₀
35
30
25
20
500
600
700
800
900
Frequency (MHz)
Gain vs. Frequency
V_DD = 32 V, I_DQ = 1.55 A
18.0
17.5
17.0
16.5
16.0
15.5
15.0
14.5
14.0
400
500
600
700
800
900
Frequency (MHz)
Data Sheet
3 of 10
Rev. 03.1, 2009-02-20