PTF141501E Datasheet, PDF (9/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz

PTF141501E
Reference Circuit for 1600 MHz
C18
0.001µF
R4
1.3kV
R3
1.2kV
QQ1
VDD
Q1
BCP56
C19
0.001µF
C20
0.001µF
R6
24kV
R5
10KV
R7
3.3kV
+ C1
10µF
35V
R1
10V
C2
0.1µF
R2
5.1kV
C3
7.5pF
l6
RF_IN
l1
l2
l3
l4
l5
C4
15pF
C5
1.7pF
Reference Circuit Schematic for 1600 MHz
Circuit Assembly Information
DUT
PTF141501E
PCB
ε 0.76 mm [0.030"] thick, _r = 4.5
C6
13pF
L1
C7
1µF
C8
0.1µF
+ _1C09µF
35V
VDD
l7
DUT
l9
l8
l10
l11
l 12
RF_OUT
l13
C10
7.5pF
L2
C1 1
C12
13pF
1µF
C13
0.1µF
+ C14
10µF
35V
141501a- 1600_sch
LDMOS Transistor
TMM4
2 oz. copper, both sides
Microstrip
Electrical Characteristics¹ at 1500 MHz
l1
0.043 λ, 50.0 Ω
l2
0.065 λ, 42.0 Ω
l3
0.065 λ, 42.0 Ω
l4
0.012 λ, 14.7 Ω
l5
0.052 λ, 8.0 Ω
l6
0.182 λ, 60.0 Ω
l7
0.283 λ, 63.0 Ω
l8
0.283 λ, 63.0 Ω
l9
0.112 λ, 4.6 Ω
l10
0.016 λ, 9.4 Ω
l11
0.053 λ, 34.0 Ω
l12
0.011 λ, 50.0 Ω
l13
0.066 λ, 50.0 Ω
1_{Electrical Characteristics are rounded.}
Dimensions: L x W (mm)
4.67 x 1.47
6.73 x 1.85
6.73 x 1.85
1.22 x 7.57
5.08 x 15.19
20.17 x 0.97
31.45 x 0.89
31.45 x 0.89
10.67 x 27.89
1.52 x 27.89
5.72 x 12.62
1.14 x 1.47
7.17 x 1.47
Dimensions: L x W (in.)
0.185 x 0.058
0.265 x 0.073
0.265 x 0.073
0.048 x 0.298
0.200 x 0.598
0.794 x 0.038
1.238 x 0.035
1.238 x 0.035
0.420 x 1.098
0.060 x 0.497
0.225 x 0.100
0.045 x 0.058
0.282 x 0.058
Data Sheet
9 of 12
Rev. 04, 2008-02-13