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PTF141501E Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz
PTF141501E
Thermally-Enhanced High Power RF LDMOS FET
150 W, 1450 – 1500 MHz, 1600 – 1700 MHz
Description
The PTF141501E is a 150-watt, GOLDMOS ® FET intended for DAB
applications. This device is characterized for Digital Audio Broadcast
operation in the 1450 to 1500 MHz band. Thermally-enhanced packaging
provides the coolest operation available. Full gold metallization ensures
excellent device lifetime and reliability.
DAB Drive-up at 28 Volts
VDD = 28 V, f = 1500 MHz, IDQ = 1.5 A, DAB mode 2
35
-20
30
-25
25
20 Efficiency
15
-30
Regrowth
-35
-40
10
-45
5
-50
0
-55
0
10 20 30 40 50 60
Output Power (W) Average
RF Characteristics
PTF141501E
Package H-30260-2
Features
• Thermally-enhanced package, pB-free and
RoHS-compliant
• Broadband internal matching
• Typical DAB Mode 2 performance at 1500
MHz, 32 V
- Average output power = 50 W
- Efficiency = 28%
- Spectral regrowth = –30 dBc
- ∆ 975 kHz fC
• Typical DAB Mode 2 performance at 1500
MHz, 28 V
- Average output power = 40 W
- Efficiency = 26%
- Spectral regrowth = –31 dBc
- ∆ 975 kHz fC
• Typical CW performance, 1500 MHz, 28 V
- Minimum output power = 150 W
- Linear gain = 16.5 dB
- Efficiency = 48% at P–1dB
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR at 28 V, 150
W (CW) output power
DAB Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 32 V, IDQ = 1.5 A, POUT = 50 WAVG, f = 1500 MHz, DAB Mode 2, fC ∆ 975 kHz
Characteristic
Symbol Min Typ
Max
Spectral Regrowth
RGTH
—
–30
—
Unit
dBc
Gain
Drain Efficiency
Gps
—
16.5
—
dB
ηD
—
29
—
%
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
Rev. 04, 2008-02-13