PTF141501E Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz

Typical Performance
DAB Drive-up at 32 Volts
V_DD = 32, I_DQ = 1.5 A, f = 1500 MHz, DAB Mode 2
35
-20
30
-25
25
20 ^Efficiency
15
-30
Regrowth ^-35
-40
10
-45
5
-50
0
-55
0
10 20
30 40 50 60
Output Power (W) Average
PTF141501E
CW Sweep in a Broadband Test Fixture
V_DD = 28 V, I_DQ = 1.5 A, P_OUT (CW) = 30 W
30
25 ^{Drain Efficiency}
20
15
Gain
10
5
Return Loss
0
1400
1450
1500
1550
Frequency (MHZ)
0
-5
-10
-15
-20
-25
-30
1600
CW Sweep
for Varying Bias Conditions
V_DD = 28 V, f = 1500 MHz
17
I_DQ = 1.5 A
16 ^IDQ ^{= 1.2 A}
I_DQ = 0.9 A
15 ^{IDQ = 0.6 A}
14
1
10
100
Output Power (W) CW
1000
Intermodulation Distortion Products
vs. Output Power
V_DD = 28, I_DQ = 1.5 A, f = 1.5 GHz, tone spacing = 1 MHz
-25
45
-30
IM3
-35
-40 ^{Drain Efficiency}
35
IM5
-45
25
-50
-55
15
IM7
-60
-65
0
5
20
40
60
80
100
Output Power (W) Average
Data Sheet
3 of 12
Rev. 04, 2008-02-13