PTF141501E Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz

Alternate Application for 1600 MHz
Typical Performance
CW Power Sweep
(1600 MHz application circuit)
V_DD = 28 V, I_DQ = 1.2 A, f = 1675 MHz
17
50
40
16
Gain
30
15
20
14
Efficiency
10
13
0
0
20 40 60 80 100 120 140 160 180
Output Power (W)
PTF141501E
Frequency Sweep, 1.6 – 1.7 GHz
V_DD = 28 V, I_DQ = 1.2 A
17
16
15
14
13
1580 1600 1620 1640 1660 1680 1700 1720
Frequency (MHz)
2-Tone Drive-up at Optimum Current
V_DD = 28 V, I_DQ = 1.2 A, f₁ = 1675 MHz, f₂ = 1676 MHz
0
-10
-20
-30
-40
-50
-60
-70
0
35
Efficiency ³⁰
25
20
3rd Order
15
5th
7th
10
5
0
20
40
60
80
100
Output Power (W) Average
Data Sheet
7 of 12
Rev. 04, 2008-02-13