PTF141501E Datasheet, PDF (11/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz

PTF141501E
Package Outline Specifications
Package H-30260-2
45° X 2.03
[.080]
2X 12.70
[.500]
CL
4X R 1.52
[.060]
(2X 4.83±0.50
[.190±.020])
LID
13.21
+0.10
–0.15
[.520 ^{+–.0.00064}]
CL
D
S
2X 3.25
[.128]
FLANGE 13.72
[.540]
23.37±0. 51
[.920±. 020]
2X 1.63
[.064] R
G
SPH 1.57
[. 062]
1.02
[. 040]
27.94
[1. 100]
22.35±0.23
[.880±. 009]
CL
34.04
[1. 340]
4.11±0.38
[.162±.015]
0.0381 [.0015] -A-
2 6 0 -c a s e s _ 3 0 2 6 0 1/ 1 -1 5 -0 7
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
11 of 12
Rev. 04, 2008-02-13