PTF141501E Datasheet, PDF (4/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz

PTF141501E
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
for Various I_DQ
V_DD = 28, f = 1.5 GHz
-25
-30 ^{IDQ = 1.1 A}
-35
-40
-45
I_DQ = 1.3 A
-50
-55
I_DQ = 1.5 A
-60
I_DQ = 1.7 A
-65
I_DQ = 1.9 A
-70
0
50
100
150
Output Power (W) Average
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.90 A
2.10 A
4.50 A
7.50 A
10.50 A
13.50 A
0
20 40 60 80 100
Case Temperature (ºC)
Broadband Circuit Impedance, 1500 MHz
Z Source
D
Z Load
G
S
Frequency
MHz
1400
1450
1500
1550
1600
Z Source Ω
R
jX
5.00
–6.70
4.50
–5.90
4.20
–5.10
3.90
–4.30
3.70
–3.70
Z Load Ω
R
jX
0.94
1.27
0.90
1.73
0.86
2.21
0.82
2.60
0.80
3.05
Z₀ = 50 Ω
Z Load
1600 MHz
1400 MHz
Z Source
1600 MHz
0.1
1400 MHz
Data Sheet
4 of 12
Rev. 04, 2008-02-13