PTF141501E Datasheet, PDF (8/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 1450-1500 MHz, 1600-1700 MHz

Broadband Circuit Impedance, 1600 MHz
Z Source
G
Frequency
D
Z Load
MHz
1600
1625
1650
1675
S
1700
Z Source Ω
R
jX
9.5
–5.6
9.6
–5.2
9.8
–5.0
9.9
–4.7
10.0
–4.4
Z Load
0.1 ^{1700 MHz}
1600 MHz
Z Source
1700 MHz
1600 MHz
PTF141501E
Z Load Ω
R
jX
0.9
–5.8
0.8
–5.4
0.8
–5.2
0.8
–5.0
0.8
–4.8
Z₀ = 50 Ω
See next page for alternate Reference Circuit, 1600 MHz
Data Sheet
8 of 12
Rev. 04, 2008-02-13