IKW30N65NL5 Datasheet, PDF (9/16 Pages) Infineon Technologies AG – Best-in-Class tradeoff between conduction and switching losses

1000
td(off)
tf
td(on)
tr
100
10
IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
1000
td(off)
tf
td(on)
tr
100
10
1
0 10 20 30 40 50 60 70 80 90
RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=30A,dynamictestcircuitin
Figure E)
1
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=30A,RG(on)=23Ω,RG(off)=10Ω,dynamic
test circuit in Figure E)
7
typ.
min.
max.
6
5
8
Eoff
Eon
7
Ets
6
5
4
4
3
3
2
2
1
1
25
50
75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
0
0 10 20 30 40 50 60 70 80 90
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature
functionofcollectorcurrent
(IC=0.4mA)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=23Ω,RG(off)=10Ω,
dynamic test circuit in Figure E)
9
Rev.2.1,2014-12-10