IKW30N65NL5 Datasheet, PDF (4/16 Pages) Infineon Technologies AG – Best-in-Class tradeoff between conduction and switching losses

IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Collector-emittervoltage,Tvj≥25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs¹⁾
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax1)
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
Soldering temperature,²⁾
wave soldering 1.6mm (0.063in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tvj
Tstg
Value
Unit
650
V
85.0
A
62.0
120.0
A
120.0
A
50.0
A
34.0
120.0
A
±20
±30
V
227.0
114.0
W
-40...+175
°C
-55...+150
°C
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.66
K/W
0.95
K/W
40
K/W
1) _{Defined by design. Not subject to production test.}
2) _{Package not recommended for surface mount applications.}
4
Rev.2.1,2014-12-10