IKW30N65NL5 Datasheet, PDF (5/16 Pages) Infineon Technologies AG – Best-in-Class tradeoff between conduction and switching losses

IKW30N65NL5
LowVCE(sat)seriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
IGES
Transconductance
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
VGE=0V,IF=30.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
IC=0.40mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=150°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=30.0A
Value
Unit
min. typ. max.
650 -
-V
-
-
1.05 1.35
1.05 -
V
- 1.04 -
-
-
1.65 2.20
1.70 -
V
- 1.68 -
4.2 5.0 5.8 V
-
-
- 40.0
400.0 -
µA
2000.0 -
-
- 100 nA
- 65.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes
VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=30.0A,
VGE=15V
LE
Value
Unit
min. typ. max.
- 4600 -
-
64
- pF
-
18
-
- 168.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=30.0A,
VGE=0.0/15.0V,
RG(on)=23.0Ω,RG(off)=10.0Ω,
Lσ=60nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
-
59
- ns
-
20
- ns
- 283 - ns
-
67
- ns
- 0.56 - mJ
- 1.35 - mJ
- 1.91 - mJ
5
Rev.2.1,2014-12-10